[HTML][HTML] A descriptive study of samples sizes used in agreement studies published in the PubMed repository

O Han, HW Tan, S Julious, L Sutton, R Jacques… - BMC medical research …, 2022 - Springer
Introduction A sample size justification is required for all studies and should give the minimum
number of subjects to be recruited for the study to achieve its primary objective. The aim of …

Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions

…, MS Kim, JS Lee, YK Choi, O Han - 24th Annual BACUS …, 2004 - spiedigitallibrary.org
The critical source of haze contamination which mainly occurred on MoSiN surface and the
interface of MoSiN and quartz is known as sulfuric ions remained after mask process. In this …

Mask CD correction method using dry-etch process

…, JC Shin, KC Jeong, YK Kim, O Han - Photomask …, 2006 - spiedigitallibrary.org
In this study, the method for achieving precise CD MTT (critical dimension mean to target) in
manufacturing attenuated PSM (phase shift mask) was investigated. As the specification for …

Investigation of sub-pellicle defect formation at KrF Lithography

…, DW Lee, MS Kim, HY Jung, O Han - Photomask and Next …, 2004 - spiedigitallibrary.org
In this study we investigated the defect due to pellicle frame materials for repeating exposure
in months. Defects were found in the sub-pellicle and the defect density was high in the 4 …

The study to enhance the mask global CD uniformity by removing local CD variation

Y Choi, M Kim, O Han - Metrology, Inspection, and Process …, 2007 - spiedigitallibrary.org
As pattern size is shrinking, required mask CD specification is tighter and its effect on wafer
patterning is more severe. Recent study showed that the effect of mask local CD variation of …

Novel cleaning techniques to achieve defect-free photomasks for sub-65-nm nodes

…, DW Lee, JS Ryu, SP Kim, O Han - Photomask Technology …, 2006 - spiedigitallibrary.org
The ability to eliminate the critical source of haze contamination which can be derived from
the cleaning chemistry residues and mass production environment has become a major …

Improvement of develop loading effect in the FEP-171 process

…, YM Lee, BK Choi, Y Choi, O Han - Photomask and Next …, 2004 - spiedigitallibrary.org
CD control of FEP-171 is difficult due to abnormal CD variation in single puddle development.
Fogging analysis patterns show that space CD in large open region is smaller than that in …

The surface treatment for prevention of growing defect

JY Jun, JS Ryu, YY Choi, O Han - 25th Annual BACUS …, 2005 - spiedigitallibrary.org
… Jea-Young Jun, Ji-Sun Ryu, Yongk-Yoo Choi, Oscar Han Jea-Young Jun, Ji-Sun Ryu,
Yongk-Yoo Choi, Oscar Han, "The surface treatment for prevention of growing defect," Proc. SPIE …

The advanced mask CD MTT control using dry etch process for sub 65 nm tech

…, JC Shin, JY Jun, TJ Ha, O Han - Photomask …, 2007 - spiedigitallibrary.org
As the design rule of the semiconductor circuit shrinks, the specification for photomask
becomes tighter. So, more precise control of CD MTT (Critical Dimension Mean to Target) is …

Enhancement of CD uniformity and throughput with KrF photomask repeater

TJ Ha, YK Choi, O Han - Optical Microlithography XVI, 2003 - spiedigitallibrary.org
It is intended to clarify the feasibity of 0.15 μm generation mask fabrication with the
photomask repeater that is based on a KrF stepper(step-and-repeat exposure system). In a …